DIFFUSE STRAHLUNG AUS (GAAL) AS/GAAS-HETERODIODEN VOM FABRY-PEROT-TYP = EMISSION DIFFUSE PAR DES HETERODIODES (GAAL) AS/GAAS DU TYPE FABRY-PEROTZEHE A; JACOBS B; ALBRECHT R et al.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 12; PP. 1365-1374; ABS. ANGL.; BIBL. 10 REF.Serial Issue

EXCITON EFFECTS ON LUMINESCENCE OF UNDOPED ACTIVE LAYERS IN GAAS-GA_1-XAL_XAS DOUBLE-HETEROSTRUCTURE CRYSTALS AT TEMPERATURES BETWEEN 77 AND 300 K.NAKASHIMA H; CHINONE N; ITO R et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 7; PP. 3092-3095; BIBL. 15 REF.Article

SPECTRES D'ELECTROLUMINESCENCE DES HETERODIODES LUMINESCENTES ROUGES AL_XGA_1-XAS P-AL_YGA_1-YAS N (Y>X)BUSOV VM; GARBUZOV DZ; GORELENOK AT et al.1974; ZH. TEKH. FIZ.; S.S.S.R.; DA. 1974; VOL. 44; NO 12; PP. 2580-2584; BIBL. 12 REF.Article

INTERFACE GROWTH CONDITIONS AND JUNCTION FORMATION FOR GA_XAL_L-X AS-GAAS HIGH EFFICIENCY LED'SMATARE HF.1972; SOLID STATE TECHNOL.; U.S.A.; DA. 1972; VOL. 15; NO 12; PP. 41-45; BIBL. 17 REF.Serial Issue

HIGH-EFFICIENCY SUPERLUMINESCENT DIODES FOR OPTICAL-FIBRE TRANSMISSIONAMANN MC; BOECK J.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 2; PP. 41-42; BIBL. 4 REF.Article

ELECTRICAL PROPERTIES AND INJECTION LUMINESCENCE IN ZNSE-ZNTE HETEROJUNCTIONS PREPARED BY LIQUID-PHASE EPITAXY.FUJITA S; ARAI S; ITOH F et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 7; PP. 3070-3075; BIBL. 37 REF.Article

LIQUID-PHASE EPITAXIAL GROWTH OF INTE AND ZN_1-XCD_XTE.KANAMORI A; OTA T; TAKAHASHI K et al.1975; J. ELECTROCHEM.; U.S.A.; DA. 1975; VOL. 122; NO 8; PP. 1117-1122; BIBL. 10 REF.Article

LIGHT-EMITTING DEVICES. I. METHODS.MATARE HF.1976; ADV. ELECTRON. ELECTRON PHYS.; U.S.A.; DA. 1976; VOL. 42; PP. 179-279; BIBL. 2 P.Article